s mhop microelectronics c orp. a STM4886 symbolv ds v gs i dm e as 50 w a p d c 2.5 -55 to 150 i d units parameter 30 17 68 c/w vv 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics 181 mj product summary v dss i d r ds(on) (m ) max 30v 17a 8 @ vgs=4.5v 5 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw mar,24,2008 1 details are subject to change without notice. a t a =25 c s o-8 1 4 3 2 1 d d d d gs s 5 6 7 8 s
symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) 1 v 3.8 g fs 20 s v sd c iss 2500 pf c oss 640 pf c rss 440 pf q g 52 nc 85 nc q gs 82 nc q gd 65 t d(on) 58 ns t r 5.4 ns t d(off) 17 ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =15v i d =17a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =15v,i d =17a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =17a v ds =15v , i d =17a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =13.5a 5 5.8 8 m ohm c f=1.0mhz c v ds =15v,i d =17a, v gs =10v drain-source diode characteristics c v gs =0v,i s =17a 0.73 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=1.25mh,r g =25 ,i as =17a,v dd = 30v.(see figure13) _ _ STM4886 ver 1.0 www.samhop.com.tw mar,24,2008 2 nc v ds =15v,i d =17a,v gs =4.5v 28 _ 1.7
STM4886 ver 1.0 www.samhop.com.tw mar,24,2008 3 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 t j ( c ) 75 25 50 v g s =4.5v i d =13.5a 125 150 v g s =10v i d = 17 a 7 65 4 3 2 1 1 v g s =10v 5 10 15 20 25 v g s =4.5v 20 16 12 8 4 0 0 0.7 4.2 3.5 2.8 2.1 1.4 125 c -55 c 25 c 25 20 15 10 5 0 0 v g s = 1 0v v g s =3 v v g s = 4.5 v 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.2 1.1 1.0 0.9 0.8 0.7 0.6 125 150 v ds =v g s i d =250ua 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 i d =250ua 0.85 125 150 100 75 50 25 0 -25 -50 i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature
STM4886 ver 1.0 www.samhop.com.tw mar,24,2008 4 15.0 12.5 10.0 7.5 5.0 2.5 0 2 4 6 8 10 0 i d =17 a 25 c 125 c 75 c r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage 20.0 10.0 1.0 125 5.0 0 0.24 0.48 0.72 0.96 1.20 25 c 75 c 125 c is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current 3600 3000 2400 1800 1200 600 0 0 5 10 15 20 25 30 coss ciss c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance 10 86 4 2 0 v ds = 15v i d =17 a 0 9 18 27 36 45 54 63 72 v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge 1000 100 600 6000 v ds =15v ,id=17a v g s =10v 1 10 6 10 60 100 600 300 t d ( o f f ) t d ( o n ) t r t f switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 60 10 1 0.1 0.1 1 10 30 50 1ms r ds ( o n) l imit v g s =10v s ingle p uls e t a =25 c 1 0 0 u s 10ms dc 1s 1 00ms i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area crss
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM4886 ver 1.0 www.samhop.com.tw mar,24,2008 5 0.001 0.01 0.1 1 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve
STM4886 ver 1.0 www.samhop.com.tw mar,24,2008 6 package outline dimensions so-8 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45
STM4886 ver 1.0 www.samhop.com.tw mar,24,2008 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.40 5.20 2.10 ? 1.5 (min) ? 1.5 + 0.1 - 0.0 12.0 2 0.3 1.75 5.5 2 0.05 8.0 4.0 2.0 2 0.05 0.3 2 0.05 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15
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